msdt75 document number: msdt75 www. smsemi .com jan.15,2015 1 module type diode maximum ratings symbol item conditions values units i d output current(d.c.) tc=101 three phase full wave 75 a i fsm surge forward current t=10ms tvj =45 920 a i 2 t circuit fusing consideration 4200 a 2 s visol isolation breakdown voltage(r.m.s) a.c.50hz;r.m.s.;1min 3000 v tvj operating junction temperature -40 to +150 tstg storage temperature -40 to +125 mt mounting torque to terminals(m5) 315% nm ms to heatsink(m5) 315% nm weight module approximately 210 g thermal characteristics symbol item conditions values units r th(j-c) thermal impedance, max. junction to case(total) 0.20 /w rth(c-s) thermal impedance, ma x. case to heatsink 0.10 /w electrical characteristics three phase bridge + thyristor v rrm / v drm 800 to 1600v i fav / i tav 75amp features y blocking voltage:800 to 1600v y three phase bridge and a thyristor y isolated module package applications y inverter for ac or dc motor control y current stabilized power supply y switching power supply y ul e243882 approved type v rrm /v drm v rsm MSDT75-08 msdt75-12 msdt75-16 800v 1200v 1600v 900v 1300v 1700v circuit symbol item conditions values units v fm forward voltage drop, max. t=25 i f =100a 1.40 v i rrm repetitive peak reverse current, max. t vj =25 v rd =v rrm t vj =150 v rd =v rrm 0.5 6 ma ma
msdt75 document number: msdt75 www. smsemi .com jan.15,2015 2 thyristor maximum ratings electrical and thermal characteristics symbol item conditions values units min. typ. max. v tm peak on-state voltage, max. t=25 i t =300a 1.70 v i rrm /i drm repetitive peak reverse current, max. / repetitive peak off-state current, max. t vj =t vjm ,v r =v rrm ,v d =v drm 20 ma v to threshold voltage t vj = t vjm 0.9 v r t slope resistance 3.0 m ? v gt gate trigger voltage, max. t vj =25 , v d =6v 3 v i gt gate trigger current, max. t vj =25 , v d =6v 150 ma v gd max. required dc gate voltage not to trigger t vj =125 , v d =2/3v drm 0.25 v i gd max. required dc gate current not to trigger t vj =125 , v d =2/3v drm 6 ma i l maximum latching current t vj =25 , r g =33 ? 300 600 ma i h maximum holding current t vj =25 , v d =6v 150 250 ma tgd gate controlled delay time t vj =25 ,i g =1a,di g / dt=1a/us 1 us tq circuit commutated turn-off time t vj = t vjm 100 us rth(j-c) thermal impedance, max. junction to case 0.30 /w rth(c-s) thermal impedance, max. case to heatsink 0.10 /w symbol item conditions values units i tav average on-state current tc=99 , single phase half wave 180 o conduction 75 a i tsm surge on-state current tvj=45 t=10ms (50hz), sine vr=0 920 a i 2 t circuit fusing consideration 4200 a 2 s visol isolation breakdown voltage(r.m.s) a.c.50hz;r.m.s.;1 min 3000 v tvj operating junction temperature -40 to +125 tstg storage temperature -40 to +125 mt mounting torque to terminals(m5) 315% nm ms to heatsink(m5) 315% nm di/dt critical rate of rise of on-state current t vj =t vjm , v d =1/2v drm ,i g =100ma d ig /d t =0.1a/ s 150 a/ s dv/dt critical rate of rise of off-state voltage, min. t j =t vjm ,v d =2/3v drm ,linear voltage rise 500 v/ s
msdt75 document number: msdt75 www. smsemi .com jan.15,2015 3 performance curves fi g 1. power dissi p ation fig2. forward current derating curve fig3. transient thermal impedance fig4. max non-repetitive forward surge current fig5. forward characteristics 0.001 t 0.01 0.1 1.0 10 s 100 0.40 / w 0.20 0 z th(j- c ) 1 10 cycles 100 50hz 2000 a 1000 0 0.5 v f 1.0 1.5 2.0 v 2.5 1000 a 100 i f 10 max . tj=25 0 tc 50 100 150 100 a 80 60 40 20 0 i d fi g 6. scr power dissi p ation single phase half wave tj=25 start per one element three phase 0 i d 20 40 60 a 80 250 w 200 150 100 50 p vtot 0 three phase 0 i tav 20 40 60 a 80 100 w 80 60 40 20 p tav 0
msdt75 document number: msdt75 www. smsemi .com jan.15,2015 4 a v e r a g e g a t e p o w e r ( 3 w ) p e a k g a t e p o w e r ( 1 0 w ) fig10. gate trigger characteristics fig7. scr forward current derating curve fig8. scr transient thermal impedance fig9. scr forward characteristics 0.5 v tm 1.0 1.5 2.0 v 2.5 max. 0 tc 50 100 150 100 a 80 60 40 20 0 i tavm 0.001 t 0.01 0.1 1.0 10 s 100 0.50 / w 0.25 0 1000 a 100 i t 10 tj=25 z th(j- c ) 10 1 i g 10 2 10 3 ma 10 4 peak forward gate voltage (10v) 100 v 10 1 v g 0.1 maximum gate non- trigger voltage 25 -10 135 peak gate current (3a)
msdt75 document number: msdt75 www. smsemi .com jan.15,2015 5 package outline information case: m4 dimensions in mm
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